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| MCR225-8FP, MCR225-10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. * Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * 300 A Surge Current Capability * Insulated Package Simplifies Mounting * Indicates UL Registered -- File #E69369 * Device Marking: Logo, Device Type, e.g., MCR225-8FP, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State (TJ = -40 to +125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR225-8FP MCR225-10FP On-State RMS Current (TC = +70C) (180 Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TC = +70C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70C, Pulse Width v 1.0 s) Forward Average Gate Power (TC = +70C, t = 8.3 ms) Forward Peak Gate Current (TC = +70C, Pulse Width v 1.0 s) RMS Isolation Voltage (TA = 25C, Relative Humidity p 20%) ( ) Operating Junction Temperature Range Storage Temperature Range Voltage(1) Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 25 300 Amps Amps 1 375 20 0.5 2.0 1500 -40 to +125 -40 to +150 A2s Watts Watt Amps Volts C C 1 2 3 2 3 Value Unit Volts http://onsemi.com ISOLATED SCRs ( 25 AMPERES RMS 600 thru 800 VOLTS ) G A K I2t PGM PG(AV) IGM V(ISO) TJ Tstg ISOLATED TO-220 Full Pack CASE 221C STYLE 2 PIN ASSIGNMENT Cathode Anode Gate ORDERING INFORMATION Device MCR225-8FP MCR225-10FP Package ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 August, 2006 - Rev. 3 1 Publication Order Number: MCR225FP/D MCR225-8FP, MCR225-10FP THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RCS RJA TL Max 1.5 2.2 (typ) 60 260 Unit C/W C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C IDRM, IRRM -- -- -- -- 10 2 A mA ON CHARACTERISTICS Peak Forward On-State Voltage(1) (ITM = 50 A) Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125C) Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 25 A, IGT = 40 mAdc) Turn-Off Time (VDRM = Rated Voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125C) VTM IGT VGT VGD IH tgt tq -- -- -- 0.2 -- -- -- -- 0.8 -- 20 1.5 1.8 40 1.5 -- 40 -- Volts mA Volts Volts mA s s -- -- 15 35 -- -- DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) (1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle 2%. dv/dt -- 100 -- V/s http://onsemi.com 2 MCR225-8FP, MCR225-10FP Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) TYPICAL CHARACTERISTICS TC, MAXIMUM CASE TEMPERATURE ( C) 130 120 110 100 90 80 = 30 60 90 180 dc 32 P(AV) , AVERAGE POWER (WATTS) 180 60 90 dc = CONDUCTION ANGLE 24 = CONDUCTION ANGLE = 30 16 TJ = 125C 8 0 4 8 12 16 20 0 0 4 8 12 16 20 IT(AV), ON-STATE FORWARD CURRENT (AMPS) IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. Maximum On-State Power Dissipation http://onsemi.com 3 MCR225-8FP, MCR225-10FP 100 70 50 30 125C 20 iF , INSTANTANEOUS FORWARD CURRENT (AMPS) 25C 10 7 5 3 2 300 1 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 1 CYCLE 275 250 225 200 TC = 85C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1 2 3 4 6 8 10 0.1 0 0.4 0.8 1.2 1.6 2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8 175 NUMBER OF CYCLES Figure 3. Maximum Forward Voltage Figure 4. Maximum Non-Repetitive Surge Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k ZJC(t) = RJC * r(t) Figure 5. Thermal Response http://onsemi.com 4 MCR225-8FP, MCR225-10FP I GT, GATE TRIGGER CURRENT (NORMALIZED) VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2 VD = 12 V 2 VD = 12 V 1.6 1.2 0.8 0.4 0 -60 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 6. Typical Gate Trigger Current versus Temperature Figure 7. Typical Gate Trigger Voltage versus Temperature 2 IH , HOLDING CURRENT (NORMALIZED) VD = 12 V 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) Figure 8. Typical Holding Current versus Temperature http://onsemi.com 5 MCR225-8FP, MCR225-10FP PACKAGE DIMENSIONS ISOLATED TO-220 Full Pack CASE 221C-02 ISSUE C -B- P -T- F N E C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 H -Y- Q 123 A K Z L G D 3 PL J R 0.25 (0.010) M B M Y STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MCR225FP/D |
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